oct.2012version1.0 magnachipsemiconductorltd . 1 mdd9n40nchannelmosfet400v absolutemaximumratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 400 v gatesourcevoltage v gss 30 v continuousdraincurrent t c =25 o c i d 6.0* a t c =100 o c 3.79* a pulseddraincurrent (1) i dm 24* a powerdissipation t c =25 o c p d 69.4 w derateabove25 o c 0.57 w/ o c repetitiveavalancheenergy (1) e ar 6.94 mj peakdioderecoverydv/dt (3) dv/dt 4.5 v/ns singlepulseavalancheenergy (4) e as 300 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c *idlimitedbymaximumjunctiontemperature thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 110 o c/w thermalresistance,junctiontocase (1) r jc 1.75 mdd9n 40 nchannelmosfet400v,6a,0.85 generaldescription these nchannel mosfet are produced using advanced magnachips mosfet technology, which provides low on state resistance, high switching performance and excellen t quality. these devices are suitable device for smps, high speed switchingandgeneralpurposeapplications. features v ds =400v i d =6a @v gs =10v r ds(on) 0.85 @v gs =10v applications powersupply pfc highcurrent,highspeedswitching d g s
oct.2012version1.0 magnachipsemiconductorltd . 2 mdd9n40nchannelmosfet400v orderinginformation partnumber temp.range package packing rohsstatus MDD9N40RH 55~150 o c to252(dpak) tape&reel halogenfree electricalcharacteristics(ta=25 o c) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 400 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 3.0 5.0 draincutoffcurrent i dss v ds =400v,v gs =0v 1 a gateleakagecurrent i gss v gs =30v,v ds =0v 100 na drainsourceonresistance r ds(on) v gs =10v,i d =3.0a 0.67 0.85 forwardtransconductance g fs v ds =30v,i d =3.0a 8 s dynamiccharacteristics totalgatecharge q g v ds =320v,i d =6a,v gs =10v 9.6 nc gatesourcecharge q gs 3.4 gatedraincharge q gd 3.6 inputcapacitance c iss v ds =25v,v gs =0v,f=1.0mhz 487.4 pf reversetransfercapacitance c rss 3.4 outputcapacitance c oss 75.6 turnondelaytime t d(on) v gs =10v,v ds =200v,i d =6a, r g =25 12.6 ns risetime t r 32 turnoffdelaytime t d(off) 19.4 falltime t f 13.2 drainsourcebodydiodecharacteristics maximumcontinuousdrainto sourcediodeforwardcurrent i s 6.0 a sourcedraindiodeforwardvoltage v sd i s =6a,v gs =0v 1.4 v bodydiodereverserecoverytime t rr i f =6a,di/dt=100a/s (3) 218 ns bodydiodereverserecovery charge q rr 1.3 c note: 1.pulsewidthisbasedonr jc &r ja andthemaximumallowedjunctiontemperatureof150c. 2.pulsetest:pulsewidth300us,dutycycle2%,pulse widthlimitedbyjunctiontemperaturet j(max) =150c. 3.i sd 6a,di/dt200a/us,v dd bvdss,startingt j =25c 4.l=14.6mh,i as =6a,v dd =50v,r g =25,startingt j =25c,
oct.2012version1.0 magnachipsemiconductorltd . 3 mdd9n40nchannelmosfet400v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2onresistancevariationwith draincurrentandgatevoltage fig.3onresistancevariationwith temperature fig.4 breakdown voltage variation vs. temperature fig.6 body diode forward voltage variation with source current and temperature 50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 notes: 1.v gs =0v 2.i d =250 ? bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c] 0 5 10 15 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10.0v v gs =20v r ds(on) [ ] i d ,draincurrent[a] 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 150 notes: 1.v gs =0v 2.250 spulsetest i dr reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes: 1.v gs =10v 2.i d =3.0a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 4 6 8 10 0.1 1 10 55 25 150 *notes; 1.vds=30v i d (a) v gs [v] 0 5 10 15 20 0 5 10 15 notes 1.250 ? ?? ? pulsetest 2.t c =25 v gs =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v =15.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v]
oct.2012version1.0 magnachipsemiconductorltd . 4 mdd9n40nchannelmosfet400v fig.7gatechargecharacteristics fig.8capacitancecharacteristics 0 2 4 6 8 10 0 2 4 6 8 10 120v 300v 480v note:i d =10a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] fig.10transientthermalresponsecurve 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 1s 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =1.75 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermalresponse t 1 ,rectangularpulseduration[sec] fig.9maximumsafeoperatingarea 1e5 1e4 1e3 0.01 0.1 1 10 0 1000 2000 3000 4000 5000 6000 7000 8000 singlepulse r thjc =1.75 /w t c =25 power(w) pulsewidth(s) fig.11singlepulsemaximumpower dissipation fig.15 maximum drain current vs. case temperature 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 i d ,draincurrent[a] t c ,casetemperature[ ] 1 10 0 200 400 600 800 1000 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v]
oct.2012version1.0 magnachipsemiconductorltd . 5 mdd9n40nchannelmosfet400v physicaldimensions dpak(to252) dimensionsareinmillimeters,unlessotherwisespe cified
oct.2012version1.0 magnachipsemiconductorltd . 6 mdd9n40nchannelmosfet400v disclaimer: theproductsarenotdesignedforuseinhostileenvironm ents,including,withoutlimitation,aircraft,nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers custome rs using or selling sellers products for use in such applicationsdosoattheirownriskandagreetofully defendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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